參數(shù)資料
型號(hào): MB84VA2103
廠商: Fujitsu Limited
英文描述: 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
中文描述: 1,600(x16)的快閃記憶體
文件頁(yè)數(shù): 16/29頁(yè)
文件大小: 422K
代理商: MB84VA2103
16
MB84VA2102
-10
/MB84VA2103
-10
Write Cycle (WE control) (Flash)
t
CH
t
WP
t
WHWH1
t
WC
t
AH
CEf
OE
t
RC
DQ
t
AS
t
F
OE
t
WPH
t
GHWL
t
DH
DQ
7
PD
A0H
D
OUT
WE
555H
PA
PA
t
OH
Data Polling
3rd Bus Cycle
t
CS
t
CO
t
DS
D
OUT
ADDRESSES
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence
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