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參數(shù)資料
型號(hào): MAXQ618J-0000+
廠商: Maxim Integrated Products
文件頁數(shù): 21/26頁
文件大小: 0K
描述: IC MCU 16BIT 80KB FLASH 44TQFN
產(chǎn)品培訓(xùn)模塊: Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 43
系列: MAXQ®
核心處理器: RISC
芯體尺寸: 16-位
速度: 12MHz
連通性: SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,紅外線,電源故障,POR,WDT
輸入/輸出數(shù): 32
程序存儲(chǔ)器容量: 80KB(80K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 2K x 8
電壓 - 電源 (Vcc/Vdd): 1.7 V ~ 3.6 V
振蕩器型: 內(nèi)部
工作溫度: 0°C ~ 70°C
封裝/外殼: 44-WFQFN 裸露焊盤
包裝: 管件
MAXQ618
16-Bit Microcontroller with Infrared Module
4
Maxim Integrated
(All voltages with respect to GND.)
Voltage Range on VDD.........................................-0.3V to +3.6V
Voltage Range on Any Lead Except VDD -0.3V to (VDD + 0.5V)
Continuous Power Dissipation (TA = +70NC)
TQFN (single-layer board)
(derate 27mW/NC above +70NC) .........................2162.2mW
TQFN (multilayer board)
(derate 37mW/NC above +70NC) ............................2963mW
Operating Temperature Range............................. 0NC to +70NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (excluding dice; soldering, 10s) ......+300NC
Soldering Temperature (reflow) ......................................+260NC
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(VDD = VRST to 3.6V, TA = 0NC to +70NC, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
VDD
VRST
3.6
V
1.8V Internal Regulator
VREG18
1.62
1.8
1.98
V
Power-Fail Warning Voltage for
Supply
VPFW
Monitors VDD (Note 2)
1.75
1.8
1.85
V
Power-Fail Reset Voltage
VRST
Monitors VDD (Note 3)
1.64
1.67
1.70
V
POR Voltage
VPOR
Monitors VDD
1.0
1.42
V
RAM Data-Retention Voltage
VDRV
(Note 4)
1.0
V
Active Current
IDD_1
Sysclk = 12MHz (Note 5)
2.5
3.75
mA
Stop-Mode Current
IS1
Power-Fail Off
TA = +25NC
0.15
2.0
F
A
TA = 0°C +70NC
0.15
8
IS2
Power-Fail On
TA = +25NC
22
31
TA = 0°C to +70NC
27.6
38
Current Consumption During
Power-Fail
IPFR
(Note 6)
[(3 x IS2) +
((PCI - 3) x (IS1 +
INANO))]/PCI
F
A
Power Consumption During
POR
IPOR
(Note 7)
100
nA
Stop-Mode Resume Time
tON
375 + (8192 x tHFXIN)
F
s
Power-Fail Monitor Startup Time
tPFM_ON
(Note 4)
150
F
s
Power-Fail Warning Detection
Time
tPFW
(Notes 4, 8)
10
F
s
Input Low Voltage for IRTX,
IRRX, RESET, and All Port Pins
VIL
VGND
0.3 x VDD
V
Input High Voltage for IRTX,
IRRX, RESET, and All Port Pins
VIH
0.7 x VDD
VDD
V
Input Hysteresis (Schmitt)
VIHYS
VDD = 3.3V, TA = +25NC
300
mV
Input Low Voltage for HFXIN
VIL_HFXIN
VGND
0.3 x VDD
V
Input High Voltage for HFXIN
VIH_HFXIN
0.7 x VDD
VDD
V
IRRX Input Filter Pulse-Width
Reject
tIRRX_R
50
ns
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