參數(shù)資料
型號(hào): MAX9112ESA+T
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 0K
描述: IC DRVR DUAL LVDS 8-SOIC
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
類型: 驅(qū)動(dòng)器
驅(qū)動(dòng)器/接收器數(shù): 2/0
規(guī)程: LVDS
電源電壓: 3 V ~ 3.6 V
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
MAX9110/MAX9112
Single/Dual LVDS Line Drivers with
Ultra-Low Pulse Skew in SOT23
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VCC = +3.0V to +3.6V, RL = 100
Ω ±1%, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = +3.3V, TA =
+25°C.) (Notes 1, 2)
AC CHARACTERISTICS
(VCC = +3.0V to +3.6V, RL = 100
Ω ±1%, CL = 5pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = +3.3V,
TA = +25°C.) (Notes 3, 4, 5; Figures 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Supply Voltage (VCC to GND) ..................................-0.3V to +4V
Input Voltage (VDIN_ to GND).....................-0.3V to (VCC + 0.3V)
Output Voltage (VDO_+, VDO_- to GND or VCC) ...-0.3V to +3.9V
Output Short-Circuit Duration
(DO_+, DO_- to VCC or GND) ................................Continuous
ESD Protection (Human Body Model, DO_+, DO_-)..........±11kV
Continuous Power Dissipation (TA = +70°C)
8-Pin SOT23 (derate 7.52mW/°C above +70°C)...........602mW
8-Pin SO (derate 5.88mW/°C above +70°C)...............471mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering,10s) ..................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Differential Output Voltage
VOD
Figure 1
250
350
450
mV
Change in Magnitude of Output
Voltage for Complementary
Output States
ΔVOD
Figure 1
0
2
35
mV
Offset Voltage
VOS
Figure 1
1.125
1.25
1.375
V
Change in Magnitude of Offset
Voltage for Complementary
Output States
ΔVOS
Figure 1
0
2
25
mV
Power-Off Leakage Current
IO(OFF)
VDO_ _ = 0 or VCC, VCC = 0 or open
-10
+10
A
Short-Circuit Output Current
IO(SHORT)
DIN_ = VCC, VDO_+ = 0 or
DIN_ = GND, VDO_- = 0
-20
mA
Input High Voltage
VIH
2.0
VCC
V
Input Low Voltage
VIL
GND
0.8
V
Input Current High
IIH
DIN_ = VCC or 2V
0
10
20
A
Input Current Low
IIL
DIN_ = GND or 0.8V
-20
-3
0
A
No-Load Supply Current
ICC
No load, DIN_ = VCC or 0
4.5
6
mA
MAX9110
6.7
8
Supply Current
ICC
DIN_ = VCC or 0
MAX9112
9.4
13
mA
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Differential High-to-Low
Propagation Delay
tPHLD
1
1.54
2.5
ns
Differential Low-to-High
Propagation Delay
tPLHD
1
1.58
2.5
ns
Differential Pulse Skew
|tPHLD - tPLHD| (Note 6)
tSKD1
40
250
ps
Channel-to-Channel Skew (Note 7)
tSKD2
70
400
ps
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