
M
Constant-Frequency, Half-Bridge CCFL
Inverter Controller
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
IN, LX to GND.........................................................-0.3V to +30V
BST to GND............................................................-0.3V to +36V
BST to LX..................................................................-0.3V to +6V
V
CC,
V
DD
to GND......................................................-0.3V to +6V
GH to LX......................................................-0.3V to V
BST
+ 0.3V
CNTL, COMP, GL, DPWM, HF, LF, HFCK,
LFCK, HSYNC, LSYNC, PS1, PS2, PSCK, TFLT,
PCOMP, SEL......................................................-0.3V to V
CC
+ 0.3V
IFB, ISEC, VFB to GND................................................-6V to +6V
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, V
DD
= 5.3V,
T
A
= 0°C to +85°C
, unless otherwise noted. Typical values are at T
A
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
SHDN
to GND...........................................................-0.3V to +6V
PGND to GND .......................................................-0.3V to +0.3V
Continuous Power Dissipation (T
A
= +70°C)
28-Pin QSOP (derate 10.8mW/°C above +70°C)......860.2mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETER
CONDITIONS
MIN
6
TYP
MAX
28
6
20
UNITS
V
mA
μA
IN Input Voltage Range
IN Quiescent Current
IN Quiescent Current, Shutdown
V
CC
Output Voltage, Normal
Operation
CC
Output Voltage, Shutdown
V
CC
Undervoltage
Lockout Threshold
V
SHDN
= 5.3V, V
IN
= 28V
SHDN
= GND
V
SHDN
= 5.3V, 6V < V
IN
< 28V,
0 < I
LOAD
< 10mA
SHDN
= GND, no load
V
CC
rising (leaving lockout)
V
CC
falling (entering lockout)
3.2
6
5.20
5.35
5.50
V
3.5
4.6
5.5
4.5
V
4.0
V
V
CC
Undervoltage-Lockout
Hysteresis
200
mV
GH, GL On-Resistance, Low
State
I
TEST
= 10mA
1
2
Ω
GH, GL On-Resistance, High
State
I
TEST
= 10mA
4
6
Ω
BST Leakage Current
Resonant Frequency Range
Minimum Off-Time
Maximum Off-Time (LX-GND)
V
BST
= 17V, V
LX
= 12V
Not tested
5
80
560
42.0
μA
kHz
ns
μs
30
330
24.0
416
30.7
Low S d e M OS FE T M axi m um
C ur ent- Li m Thr eshol d ( LX G N D
370
400
470
mV
High-Side MOSFET Maximum
Current-Limit Threshold (IN – LX)
370
400
470
mV
Low-Side MOSFET Zero-Current-
Crossing Threshold (GND – LX)
0
10
18
mV
High-Side MOSFET Zero-Current-
Crossing Threshold (LX – IN)
-16
+6
+28
mV
Current-Limit Leading Edge
Blanking
310
410
560
ns
IFB Regulation Point
IFB Maximum AC Voltage
Internally full-wave rectified
770
790
±3
810
mV
V