參數(shù)資料
型號: MAX6876ETX+
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: EEPROM-Programmable, Quad, Power-Supply Tracker/Sequencer Circuit
中文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC36
封裝: 6 X 6 MM, 0.80 MM HEIGHT, MO-220WJJD-1, TQFN-36
文件頁數(shù): 31/39頁
文件大?。?/td> 425K
代理商: MAX6876ETX+
MAX6876
EEPROM-Programmable, Quad,
Power-Supply Tracker/Sequencer Circuit
______________________________________________________________________________________
37
REGISTER
ADDRESS
EEPROM MEMORY
ADDRESS
READ/WRITE
DESCRIPTION
17h
37h
Reserved. Should not be overwritten.
18h
38h
Reserved. Should not be overwritten.
19h
39h
Reserved. Should not be overwritten.
1Ah
3Ah
Reserved. Should not be overwritten.
1Bh
3Bh
Reserved. Should not be overwritten.
1Ch
3Ch
Reserved. Should not be overwritten.
1Dh
3Dh
Reserved. Should not be overwritten.
1Eh
3Eh
Reserved. Should not be overwritten.
1Fh
3Fh
Reserved. Should not be overwritten.
Table 16. Register Map (continued)
Applications Information
Layout and Bypassing
For better noise immunity, bypass each of the voltage-
detector inputs to GND with 0.1F capacitors installed
as close to the device as possible. Bypass ABP to GND
with 1F capacitors installed as close to the device as
possible. ABP is an internally generated voltage and
should not be used to supply power to external circuitry.
Configuration Latency Period
A delay of less than 5s occurs between writing to the
configuration registers and the time when these
changes actually take place, unless when changing one
of the voltage detector’s thresholds. Changing a volt-
age-detector threshold typically takes 150s. When
changing EEPROM contents, software reboot or cycling
of power is required for these changes to transfer to
volatile memory.
Chip Information
PROCESS: BiCMOS
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