參數(shù)資料
型號: MAX6875ETJ+T
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors
中文描述: 4-CHANNEL POWER SUPPLY MANAGEMENT CKT, PQCC32
封裝: 7 X 7 MM, TQFN-32
文件頁數(shù): 40/40頁
文件大?。?/td> 403K
代理商: MAX6875ETJ+T
MAX6874/MAX6875
EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
_______________________________________________________________________________________
9
Pin Description (continued)
PIN
MAX6874
MAX6875
NAME
FUNCTION
17
GPI4
General-Purpose Logic Input 4 (MAX6874 Only). An internal 10A current source pulls GPI4 to
GND. Configure GPI4 to control watchdog timer functions or the programmable outputs.
18
GPI3
General-Purpose Logic Input 3. An internal 10A current source pulls GPI3 to GND. Configure
GPI3 to control watchdog timer functions or the programmable outputs.
19
GPI2
General-Purpose Logic Input 2. An internal 10A current source pulls GPI2 to GND. Configure
GPI2 to control watchdog timer functions or the programmable outputs.
20
GPI1
General-Purpose Logic Input 1. An internal 10A current source pulls GPI1 to GND. Configure
GPI1 to control watchdog timer functions or the programmable outputs.
21
ABP
Internal Power-Supply Output. Bypass ABP to GND with a 1F ceramic capacitor. ABP powers
the internal circuitry of the MAX6874/MAX6875. Do not use ABP to supply power to external
circuitry.
22
DBP
Internal Digital Power-Supply Output. Bypass DBP to GND with a 1F ceramic capacitor. DBP
supplies power to the EEPROM memory and the internal logic circuitry. Do not use DBP to
supply power to external circuitry.
25
IN6
Voltage Input 6. Configure IN6 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN6
to GND with a 0.1F capacitor installed as close to the device as possible.
26
IN5
Voltage Input 5. Configure IN5 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN5
to GND with a 0.1F capacitor installed as close to the device as possible.
27
IN4
Voltage Input 4. Configure IN4 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN4
to GND with a 0.1F capacitor installed as close to the device as possible.
28
IN3
Voltage Input 3. Configure IN3 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN3
to GND with a 0.1F capacitor installed as close to the device as possible.
29
IN2
Voltage Input 2. Configure IN2 to detect voltage thresholds from +2.5V to +5.5V in 50mV
increments or +1.25V to +3.05V in 25mV increments. For improved noise immunity, bypass IN2
to GND with a 0.1F capacitor installed as close to the device as possible.
30
IN1
High-Voltage Input 1. Configure IN1 to detect voltage thresholds from +2.5V to +13.2V in 50mV
increments or +1.25V to +7.6V in 25mV increments. For improved noise immunity, bypass IN1
to GND with a 0.1F capacitor installed as close to the device as possible.
31
I.C.
Internal Connection. Leave unconnected.
32
2
PO1
Programmable Output 1. Configurable active-high or active-low open-drain output. PO1 pulls
low with a 10A internal current sink for +1V < VABP < VUVLO. PO1 assumes its programmed
conditional output state when ABP exceeds UVLO.
——
EP
Exposed Paddle. Exposed paddle is internally connected to GND.
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