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MAX4410
80mW, DirectDrive Stereo Headphone Driver
with Shutdown
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(PVDD = SVDD = 3V, PGND = SGND = 0, SHDNL = SHDNR = SVDD, C1 = C2 = 2.2F, RIN = RF = 10k
, RL = ∞, TA = TMIN to TMAX,
unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PGND to SGND .....................................................-0.3V to +0.3V
PVDD to SVDD .................................................................-0.3V to +0.3V
PVSS to SVSS .........................................................-0.3V to +0.3V
PVDD and SVDD to PGND or SGND .........................-0.3V to +4V
PVSS and SVSS to PGND or SGND ..........................-4V to +0.3V
IN_ to SGND ..........................................................-0.3V to +0.3V
SHDN_ to SGND........................(SGND - 0.3V) to (SVDD + 0.3V)
OUT_ to SGND ............................(SVSS - 0.3V) to (SVDD + 0.3V)
C1P to PGND.............................(PGND - 0.3V) to (PVDD + 0.3V)
C1N to PGND .............................(PVSS - 0.3V) to (PGND + 0.3V)
Output Short Circuit to GND or VDD...........................Continuous
Continuous Power Dissipation (TA = +70°C)
14-Pin TSSOP (derate 9.1mW/°C above +70°C) ..........727mW
16-Bump UCSP (derate 15.2mW/°C above +70°C)....1212mW
Junction Temperature ......................................................+150°C
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Bump Temperature (soldering) (Note 1)
Infrared (15s) ...............................................................+220°C
Vapor Phase (60s) .......................................................+215°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
VDD
Guaranteed by PSRR test
1.8
3.6
V
One channel enabled
4
Quiescent Supply Current
IDD
Two channels enabled
7
11.5
mA
Shutdown Supply Current
ISHDN
SHDNL = SHDNR = GND
6
10
A
VIH
0.7 x
SVDD
SHDN_ Thresholds
VIL
0.3 x
SVDD
V
SHDN_ Input Leakage Current
-1
+1
A
SHDN_ to Full Operation
tSON
175
s
CHARGE PUMP
Oscillator Frequency
fOSC
272
320
368
kHz
AMPLIFIERS
Input Offset Voltage
VOS
Input AC-coupled, RL = 32
0.5
2.4
mV
Input Bias Current
IBIAS
-100
+100
nA
1.8V
≤ VDD ≤ 3.6V
DC
75
90
fRIPPLE = 1kHz
90
Power-Supply Rejection Ratio
PSRR
200mVP-P ripple
fRIPPLE = 20kHz
55
dB
RL = 32
65
Output Power
POUT
THD + N = 1%
RL = 16
40
80
mW
Note 1: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device
can be exposed to during board-level solder attach and rework. This limit permits only the use of the solder profiles recom-
mended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and convection reflow.
Preheating is required. Hand or wave soldering is not allowed.