參數(shù)資料
型號: MAX1614
廠商: Maxim Integrated Products, Inc.
英文描述: High-Side, N-Channel MOSFET Switch Driver
中文描述: 高邊、N通道MOSFET開關(guān)驅(qū)動(dòng)器
文件頁數(shù): 8/8頁
文件大小: 87K
代理商: MAX1614
Inc reasing Low-Battery
Comparator Hysteresis
The MAX1614 contains an on-chip comparator with 2%
hysteresis for low-battery detection. If more than 2%
hysteresis is needed on the low-battery comparator and
LBO
is connected to
OFF,
use the circuit in Figure 5 to
add hysteresis. The circuit of Figure 5 shows
LBO
con-
trolling an N-channel MOSFET that shorts R2 to add
positive feedback to the trip point. This is necessary to
prevent loading down the 1μA pull-up at
OFF
(Figure 1).
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
8
___________________Maxim Integrated Produc ts, 120 S an Gabriel Drive, S unnyvale, CA 94086 (408) 737-7600
1996 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
M
High-S ide, N-Channel MOS FET
S witc h Driver
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
________________________________________________________________Pac kage Information
L
α
C
A1
B
D
A
A1
B
C
D
E
e
H
L
α
MIN
0.036
0.004
0.010
0.005
0.116
0.116
0.188
0.016
MAX
0.044
0.008
0.014
0.007
0.120
0.120
0.198
0.026
MIN
0.91
0.10
0.25
0.13
2.95
2.95
4.78
0.41
MAX
1.11
0.20
0.36
0.18
3.05
3.05
5.03
0.66
INCHES
MILLIMETERS
8-PIN
μ
MAX
MICROMAX SMALL-OUTLINE
PACKAGE
0.65
0.0256
A
e
E
H
D
0.101mm
0.004 in
21-0036D
___________________Chip Information
TRANSISTOR COUNT: 264
SUBSTRATE CONNECTED TO GND
MAX1614
OFF
LBO
GND
LBI
SRC
GATE
N
ON
BATT
LOAD
R2
N
2N7002
(SOT23)
R1
R3
R1 = 909k
R2, R3 = 150k
V
L
= 8.5V
V
H
= 9.8V
HYSTERESIS = 6%
FALLING TRIP POINT V
L
V
L
= V
TH
( )
RISING TRIP POINT V
H
V
H
= V
TH
( )
R3
R3
Figure 5. Increasing Hysteresis of the Battery Disconnect
Circuit
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