
M
High-S ide, N-Channel MOS FET
S witc h Driver
_______________________________________________________________________________________
5
_______________Detailed Desc ription
The MAX1614 uses an internal, monolithic charge pump
and low-dropout linear regulator to supply the required
8V V
GS
voltage to fully enhance an N-channel MOSFET
high-side switch (Figure 1). The charge pump typically
supplies 30μA, charging 800pF of gate capacitance in
400μs (V
BATT
= 15V). For slower turn-on times, simply
add a small capacitor between the GATE and SRC
pins. When turned off, GATE and SRC pull low and typi-
cally discharge an 800pF gate capacitance in 80μs.
The MAX1614 provides separate on/off control inputs
(
ON
and
OFF
).
ON
and
OFF
connect, respectively, to
the
SET
and
RESET
inputs of an internal flip-flop. When
ON
is pulsed low (with
OFF
= high), the internal charge
pump turns on, and GATE is pumped to 8V above SRC,
turning on the external MOSFETs. The charge pump
maintains gate drive to the external MOSFETs until
OFF
is pulsed low. When this happens, the internal charge
pump turns off, and GATE discharges to ground
through an internal switch. For slower turn-on times,
simply add a small capacitor.
__________ Applic ations Information
Connec ting
ON
/
OFF
to 3V or 5V Logic
ON
and
OFF
internally connect to 2μA max pull-up
current sources (Figure 1). The open-circuit voltage
for
ON
and
OFF
ranges from 7V to 10.5V (nominally
8.5V). Since the current sources are relatively weak,
connecting
ON
and
OFF
directly to logic powered from
lower voltages (e.g., 3V or 5V) poses no problem if the
gate outputs driving these pins can sink at least 2μA
while high.
Although the MAX1614 shutdown function was designed
to operate with a single pushbutton on/off switch, it can
also be driven by a single gate. Connect
ON
to GND
and drive
OFF
directly (Figure 2).
Maximum S witc hing Rate
The MAX1614 is not intended for fast switching appli-
cations. In fact, it is specifically designed to limit the
rate of change of the load current,
I/
t. The maximum
switching rate is limited by the turn-on time, which is a
function of the charge-pump output current and the
total capacitance on GATE (C
GATE
). Calculate the turn-
on time as a function of external MOSFET gate capaci-
tance using the Gate Charging Current vs. V
BATT
graph
in the Typical Operating Characteristics. Since turn-off
time is small compared to turn-on time, the maximum
switching rate is approximately 1/t
ON
.
Adding Gate Capac itanc e
The charge pump uses an internal monolithic transfer
capacitor to charge the external MOSFET gates.
Normally, the external MOSFET’s gate capacitance is
sufficient to serve as a reservoir capacitor. If the
MOSFETs are located at a significant distance from the
MAX1614, place a local bypass capacitor (100pF typ)
across the GATE and SRC pins. For slower turn-on
times, simply add a small capacitor between GATE and
SRC.
______________________________________________________________Pin Desc ription
System Ground
GND
5
Gate-Drive Output. Connect to the gates of external, N-channel MOSFETs. When the MAX1614 is off, GATE
actively pulls to GND.
GATE
6
Source Input. Connect to the sources of external, N-channel MOSFETs. When the MAX1614 is off, SRC
actively pulls to GND.
SRC
7
Battery Input. Connect to a battery voltage between 5V and 26V.
BATT
8
Low-Battery Comparator Input.
LBO
goes low when V
LBI
falls below 1.20V (typ). Connect a voltage divider
between BATT, LBI, and GND to set the battery undervoltage trip threshold (see Typical Operating Circuit.
LBI
4
Open-Drain, Low-Battery Comparator Output.
LBO
is low when V
LBI
is below the trip point.
LBO
3
PIN
RESET
Input to the On/Off Latch. Pulse
OFF
low with
ON
high to turn off the external MOSFET switch. When
both
ON
and
OFF
are low, the part is off.
OFF
2
SET
Input to the On/Off Latch. Pulse
ON
low with
OFF
high to turn on the external MOSFET switch. When
both
ON
and
OFF
are low, the part is off.
ON
1
FUNCTION
NAME