參數(shù)資料
型號(hào): MAX13331GEE/V+T
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 8/15頁(yè)
文件大小: 0K
描述: IC AMP STEREO HEADPHONE 16-QSOP
其它有關(guān)文件: Automotive Product Guide
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
系列: DirectDrive®
類型: AB 類
輸出類型: 耳機(jī),2-通道(立體聲)
在某負(fù)載時(shí)最大輸出功率 x 通道數(shù)量: 135mW x 2 @ 32 歐姆
電源電壓: 4 V ~ 5.5 V
特點(diǎn): 消除爆音,短路保護(hù),關(guān)機(jī)
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 16-QSOP
封裝/外殼: 16-SSOP(0.154",3.90mm 寬)
包裝: 帶卷 (TR)
MAX13330/MAX13331
Automotive DirectDrive Headphone Amplifiers
with Output Protection and Diagnostics
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD = VCPVDD = +5V, VSGND = VPGND = 0V, SHDN = VDD, C1 = C2 = 1F, RL =
∞, resistive load referenced to ground, for
MAX13330 gain = -1.5V/V (internally set), for MAX13331 gain = -1.5V/V (RIN = 30k
Ω, RFB = 45kΩ), TA = TJ = -40°C to +105°C, unless
otherwise noted. Typical values are at TA = +25°C, unless otherwise noted.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
VDD, CPVDD to SGND..............................................-0.3V to +6V
VSS, CPVSS to SGND ...............................................+0.3V to -6V
VDD, CPVDD..........................................................-0.3V to +0.3V
VSS, CPVSS ...........................................................-0.3V to +0.3V
SHDN, DIAG to SGND................................-0.3V to (VDD + 0.3V)
OUT_ to PGND.......................................(VCPVSS - 0.3V) to +45V
IN_ to SGND (MAX13330)................(VSS - 0.3V) to (VDD + 0.3V)
IN_ to SGND (MAX13331) ..........................-0.3V to (VDD + 0.3V)
C1P to PGND........................................-0.3V to (VCPVDD + 0.3V)
C1N to PGND..............................................(VSS - 0.3V) to +0.3V
Output Short-Circuit Duration.....................................Continuous
Continuous Power Dissipation (TA = +70°C)
QSOP (derate 9.6mW/°C above +70°C))..................771.5mW
Operating Temperature Range .........................-40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PACKAGE THERMAL CHARACTERISTICS (Note 1)
QSOP
Junction-to-Ambient Thermal Resistance (
θJA) ......103.7°C/W
Junction-to-Case Thermal Resistance (
θJC) ................37°C/W
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL
Amplifier Supply Voltage Range
VDD
4.0
5.5
V
Charge-Pump Supply Voltage
Range
VCPVDD
4.0
5.5
V
Charge-Pump Output Voltage
VCPVSS
-VDD
V
Quiescent Supply Current
IDD
RL =
10
mA
Shutdown Supply Current
ISHDN
10
μA
SHDN Input-Logic High
VIH
2
V
SHDN Input-Logic Low
VIL
0.8
V
SHDN Input Leakage Current
-1
+1
μA
SHDN to Full Operation Time
tSON
100
μs
DIAGNOSTICS
No fault
0.02 x
VDD
OUTR short to
SGND
0.22 x
VDD
0.25 x
VDD
0.28 x
VDD
OUTL short to
SGND
0.47 x
VDD
0.50 x
VDD
0.53 x
VDD
OUTR short to
VBAT
0.72 x
VDD
0.75 x
VDD
0.78 x
VDD
Diagnostic Output Voltage
VDIAG
RDIAG = ,
TA = +25°C
OUTL short to
VBAT
0.97 x
VDD
V
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