參數(shù)資料
型號(hào)： MAPRST1214-030UF
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 56K
代理商： MAPRST1214-030UF
1
Preliminary Datasheet
Revision 01/14/2003
MAPRST1214-030UF
RADAR PULSED POWER TRANSISTOR
30W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle
FEATURES
OUTLINE DRAWING
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Typcial Second Harmonic Level < -30dBc
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
70
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
4.8
A
Total Power Dissipation @
+25°C
PTOT
145
W
Junction Temperature
TJ
200
°C
Storage Temperature
TSTG
-65 to +200
°C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Max
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
BVCES
70
-
V
IC = 10 mA
Collector-Emitter Leakage Current
ICES
-
2.0
mA
VCE = 40V
Thermal Resistance
RTH
-
1.2
°C/W
VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz
Output Power
POUT
30
-
W
VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz
Power Gain
GP
7.3
-
dB
VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz
Gain Flatness
ΔG
-
1.25
dB
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
Collector Efficiency
η
c
45
-
%
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
Input Return Loss
RL
9
-
dB
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
Amplitude Pulse Droop
Droop
-
0.5
dB
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
Load Mismatch Tolerance
VSWR-T
-
3:1
-
VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
Z IF (Ω)
Z OF (Ω)
1200
6.7 - j6.9
14.3 + j2.4
1300
6.5 - j6.5
11.2 - j0.8
1400
6.3 - j4.5
7.2 - j0.1
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
Ω
50
Ω
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參數(shù)描述
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MAPRST1214-150UF_07 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
MAPRST1214-30UF 功能描述:射頻MOSFET電源晶體管 1.2-1.4GHz 30W Gain:7.5dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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MAPRST2729-170M 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RADAR PULSED POWER TRANSISTOR
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