參數(shù)資料
型號： MAPRST1214-6UF
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁數(shù)： 1/3頁
文件大?。?/td> 193K
代理商： MAPRST1214-6UF
Radar Pulsed Power Transistor
6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
M/A-COM Products
Released, 30 May 07
MAPRST1214-6UF
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol
Min
Max
Units
Collector-Emitter Breakdown Voltage IC = 10mA
BVCES
65
-
V
Collector-Emitter Leakage Current
VCE = 40V
ICES
-
3.0
mA
Thermal Resistance
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
RTH(JC)
-
1.8
°C/W
Output Power
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
POUT
6
-
W
Power Gain
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
GP
8.75
-
dB
Collector Efficiency
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
η
C
40
-
%
Input Return Loss
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
RL
-
-10
dB
Pulse Droop
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
Droop
-
0.3
dB
Load Mismatch Tolerance
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
VSWR-T
-
3:1
-
Load Mismatch Stability
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
VSWR-S
-
1.5:1
-
Gain Flatness
Vcc = 36V, Pin = 0.8W
F = 1.2, 1.3, 1.4 GHz
ΔG
-
0.75
dB
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
1.9
A
Power Dissipation @ +25°C
PTOT
100
W
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
TJ
200
°C
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