參數(shù)資料
型號: MAG-725M4
廠商: Electronic Theatre Controls, Inc.
英文描述: Agilent MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package
中文描述: 安捷倫的MGA - 725M4低噪聲放大器,具有旁路開關在微型無鉛封裝
文件頁數(shù): 2/21頁
文件大小: 404K
代理商: MAG-725M4
MGA-725M4 Absolute Maximum Ratings
[1]
Symbol
Parameter
Units
Absolute
Maximum
Operation
Maximum
V
d
Maximum Input to Output Voltage
V
5.5
4.2
V
gs
Maximum Input to Ground DC Voltage
V
+.3
-5.5
+.1
-4.2
I
d
Supply Current
mA
70
60
P
d
Power Dissipation
[1,2]
mW
300
250
P
in
CW RF Input Power
dBm
+20
+13
T
j
Junction Temperature
°
C
170
150
T
STG
Storage Temperature
°
C
-65 to +150
-40 to +85
Thermal Resistance:
[2]
θ
jc
= 180
°
C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. T
case
= 25
°
C.
Electrical Specifications,
T
c
= +25
°
C, Z
o
= 50
, I
d
= 20 mA, V
d
= 3V, unless noted.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
σ
V
gs
test
[1]
NF test
[1]
f = 2.0 GHz V
d
= 3.0V (V
ds
= 2.5V)
I
d
= 20 mA
V
-0.65
-0.51
-0.37
0.035
f = 2.0 GHz V
d
= 3.0V (= V
ds
- V
gs
)
I
d
= 20 mA
dB
1.4
1.8
0.06
Ga test
[1]
f = 2.0 GHz V
d
= 3.0V (= V
ds
- V
gs
)
I
d
= 20 mA
dB
13.5
14.4
15.5
0.42
IIP3 test
[1]
f = 2.04 GHz V
d
= 3.0V (= V
ds
- V
gs
)
I
d
= 20 mA
dB
8.5
9.9
0.35
IL test
[1,4]
f = 2.0 GHz V
d
= 3.0V (V
ds
= 0V, V
gs
= -3V)
I
d
= 0.0 mA
dB
1.6
3.5
0.07
Ig test
[1,4]
f = 2.0 GHz V
d
= 3.0V (V
ds
= 0V, V
gs
= -3V)
I
d
= 0.0 mA
μ
A
2.0
2.0
Nfo
[2]
Minimum Noise Figure
As measured in Figure 2 Test Circuit
(Computed from s-parameter and noise
parameter performance as measured in a
50
impedance fixture)
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
1.2
1.2
1.3
1.3
1.4
1.6
Gain
[2]
Associated Gain at Nfo
As measured in Figure 2 Test Circuit
(Computed from s-parameter and noise
parameter performance as measured in a
50
impedance fixture)
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
17.6
16.6
15.7
14.8
12.8
10.6
P1dB
[1]
Output Power at 1 dB Gain Compression
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
I
d
= 0 mA
I
d
= 5 mA
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
dBm
15.2
3.4
9.14
13.13
15.25
16.16
0.53
IIP3
[1]
Input Third Order Intercept Point
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
I
d
= 0 mA
I
d
= 5 mA
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
dBm
35
3.1
6.6
9.9
13.0
14.7
0.35
RLin
[1]
Input Return Loss as measured in Fig. 1
f = 2.0 GHz
dB
-8.2
0.41
RLout
[1]
Output Return Loss as measured in Fig. 1
f = 2.0 GHz
dB
-15
1.3
ISOL
[1]
Isolation |S
12
|
2
As measured in Fig. 2
f = 2.0 GHz
dB
-23.4
0.4
Notes:
1. Standard deviation and typical data as measured in the test circuit of Figure 1. Data based on 500 part sample size from 3 wafer lots.
2. Typical data computed from S-parameter and noise parameter data measured in a 50
system.
3. V
d
= total device voltage = V
dg
4. Bypass mode voltages shown are used in production test. For source resistor biasing, Bypass mode is set by opening the source resistor.
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