參數(shù)資料
型號(hào)： MAC997A6RLRP
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 晶閘管
英文描述： SENSITIVE GATE TRACS
中文描述： 400 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
封裝： CASE 29-11, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 1/12頁(yè)
文件大小： 185K
代理商： MAC997A6RLRP
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 2
1
Publication Order Number:
MAC997/D
Preferred Device
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO–92 package which is readily adaptable for use in
automatic insertion equipment.
One–Piece, Injection–Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/
μ
sec at 110
°
C)
Commutating di/dt of 1.6 Amps/msec at 110
°
C
High Surge Current of 8 Amps
Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date
Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
(TJ = –40 to +110
°
C)(1)
Sine Wave 50 to 60 Hz, Gate Open
MAC997A6,B6
MAC997A8,B8
VDRM,
VRRM
400
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +50
°
C)
IT(RMS)
0.8
Amp
Peak Non–Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110
°
C)
ITSM
8.0
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
.26
A2s
Peak Gate Voltage
(t
2.0 s, TC = +80
°
C)
VGM
5.0
Volts
Peak Gate Power
(t
2.0 s, TC = +80
°
C)
PGM
5.0
Watts
Average Gate Power
(TC = 80
°
C, t
8.3 ms)
PG(AV)
0.1
Watt
Peak Gate Current
(t
2.0 s, TC = +80
°
C)
IGM
1.0
Amp
Operating Junction Temperature Range
TJ
–40 to
+110
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
0.8 AMPERE RMS
400 thru 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
MT1
G
MT2
TO–92 (TO–226AA)
CASE 029
STYLE 12
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 2
Main Terminal 1
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAC997A8 功能描述:THYRISTOR TRIAC .8A 600V TO-92 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 三端雙向可控硅開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 三端雙向可控硅開(kāi)關(guān)類(lèi)型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:6A 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:1.5V 電流 - 非重復(fù)電涌，50、60Hz (Itsm):* 電流 - 柵極觸發(fā)電流 (Igt)（最大）:10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類(lèi)型:* 封裝/外殼:* 供應(yīng)商設(shè)備封裝:* 包裝:* 其它名稱(chēng):568-9616-6
MAC997A8G 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC997A8RL1 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SENSITIVE GATE TRACS
MAC997A8RL1G 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC997A8RLRP 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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