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參數(shù)資料
| 型號： | MAC997B8 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | SENSITIVE GATE TRACS |
| 中文描述： | 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 185K |
| 代理商： | MAC997B8 |
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 2
1
Publication Order Number:
MAC997/D
Preferred Device
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO–92 package which is readily adaptable for use in
automatic insertion equipment.
One–Piece, Injection–Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/
μ
sec at 110
°
C)
Commutating di/dt of 1.6 Amps/msec at 110
°
C
High Surge Current of 8 Amps
Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date
Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
(TJ = –40 to +110
°
C)(1)
Sine Wave 50 to 60 Hz, Gate Open
MAC997A6,B6
MAC997A8,B8
VDRM,
VRRM
400
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +50
°
C)
IT(RMS)
0.8
Amp
Peak Non–Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110
°
C)
ITSM
8.0
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
.26
A2s
Peak Gate Voltage
(t
2.0 s, TC = +80
°
C)
VGM
5.0
Volts
Peak Gate Power
(t
2.0 s, TC = +80
°
C)
PGM
5.0
Watts
Average Gate Power
(TC = 80
°
C, t
8.3 ms)
PG(AV)
0.1
Watt
Peak Gate Current
(t
2.0 s, TC = +80
°
C)
IGM
1.0
Amp
Operating Junction Temperature Range
TJ
–40 to
+110
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
0.8 AMPERE RMS
400 thru 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
MT1
G
MT2
TO–92 (TO–226AA)
CASE 029
STYLE 12
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 2
Main Terminal 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC997B8G | 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC997B8RL1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SENSITIVE GATE TRACS |
| MAC997B8RL1G | 功能描述:雙向可控硅 THY .8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC997B8RLRP | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC9D | 功能描述:雙向可控硅 THY 8A 400V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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