參數(shù)資料
型號(hào)： MAC4DLM
廠商： ON SEMICONDUCTOR
英文描述： Sensitive Gate Triacs Silicon Bidirectional Thyristors(三端雙向可控硅開關(guān))
中文描述： 敏感的門雙向硅雙向晶閘管（三端雙向可控硅開關(guān)）
文件頁數(shù)： 2/7頁
文件大?。?/td> 78K
代理商： MAC4DLM
MAC4DLM
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
3.5
88
80
Maximum Lead Temperature for Soldering Purposes (Note 3)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak OnState Voltage (Note 4) (I
TM
=
±
6.0 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
V
TM
I
GT
1.3
1.6
V
1.8
2.1
2.4
4.2
3.0
3.0
3.0
5.0
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
V
GT
0.5
0.5
0.5
0.5
0.62
0.57
0.65
0.74
1.3
1.3
1.3
1.3
V
Gate NonTrigger Voltage
(V
D
= 12 V, R
L
= 100 , T
J
= 110
°
C)
MT2(+), G(+); MT2(+), G(); MT2(), G(); MT2(), G(+)
V
GD
0.1
0.4
V
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±
200 mA)
Latching Current
MT2(+), G(+)
(V
D
= 12 V, I
G
= 5.0 mA)
MT2(+), G()
(V
D
= 12 V, I
G
= 5.0 mA)
MT2(), G()
(V
D
= 12 V, I
G
= 5.0 mA)
MT2(), G(+)
(V
D
= 12 V, I
G
= 10 mA)
DYNAMIC CHARACTERISTICS
I
H
1.5
15
mA
I
L
1.75
5.2
2.1
2.2
10
10
10
10
mA
Rate of Change of Commutating Current
(V
D
= 200 V, I
TM
= 1.8 A, Commutating dv/dt = 1.0 V/ sec,
T
J
= 110
°
C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 ,
CS = 0.03 fd) With snubber see Figure 11
di/dt(c)
3.0
A/ms
Critical Rate of Rise of OffState Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 110
°
C)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8
″
from case for 10 seconds.
4. Pulse Test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
dv/dt
10
V/ s
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MAC4DLM001
DPAK3
369D
75 Units / Rail
MAC4DLM001G
DPAK3
(PbFree)
369D
75 Units / Rail
MAC4DLMT4
DPAK
369C
2500 / Tape & Reel
MAC4DLMT4G
DPAK
(PbFree)
369C
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
MAC4DSM Triacs Silicon Bidirectional Thyristors(三端雙向可控硅開關(guān))
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MAC4DSN-001G Triacs Silicon Bidirectional Thyristors
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAC4DLM_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLM-001 功能描述:THYRISTOR TRIAC 4A 600V IPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 三端雙向可控硅開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 三端雙向可控硅開關(guān)類型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:6A 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:1.5V 電流 - 非重復(fù)電涌，50、60Hz (Itsm):* 電流 - 柵極觸發(fā)電流 (Igt)（最大）:10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類型:* 封裝/外殼:* 供應(yīng)商設(shè)備封裝:* 包裝:* 其它名稱:568-9616-6
MAC4DLM-001G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLM-1G 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC4DLMT4 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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