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參數(shù)資料
| 型號： | MAC4DSN-001G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 800 V, 4 A, TRIAC |
| 封裝： | LEAD FREE, PLASTIC, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 92K |
| 代理商： | MAC4DSN-001G |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 5
1
Publication Order Number:
MAC4DSM/D
MAC4DSM, MAC4DSN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
OnState Current Rating of 4.0 Amperes RMS at 108
°
C
Low IGT 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt 50 V/ s at 125
°
C
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage
(Note 1) (T
J
= 40 to 125
°
C, Sine
Wave, 50 to 60 Hz, Gate Open)
MAC4DSM
MAC4DSN
V
DRM,
V
RRM
600
800
V
OnState RMS Current
(Full Cycle Sine Wave, 60 Hz,
T
C
= 108
°
C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125
°
C)
Circuit Fusing Consideration
(t = 8.3 msec)
I
T(RMS)
4.0
A
I
TSM
40
A
I
2
t
6.6
A
2
sec
Peak Gate Power
(Pulse Width
≤
10 sec, T
C
= 108
°
C)
Average Gate Power
(t = 8.3 msec, T
C
= 108
°
C)
P
GM
0.5
W
P
G(AV)
0.1
W
Peak Gate Current
(Pulse Width
≤
10
sec, T
C
= 108
°
C)
Peak Gate Voltage
(Pulse Width
≤
10
sec, T
C
= 108
°
C)
Operating Junction Temperature Range
I
GM
0.2
A
V
GM
5.0
V
T
J
T
stg
40 to 125
°
C
°
C
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
40 to 150
TRIACS
4.0 AMPERES RMS
600 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
DPAK3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
Y
WW
AC4DSx
= Year
= Work Week
= Device Code
x= M or N
= PbFree Package
G
1 2
3
4
YWW
AC
4DSxG
1
23
4
YWW
AC
4DSxG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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| MAC4DSM-001G | Triacs Silicon Bidirectional Thyristors |
| MAC4DSMT4G | Triacs Silicon Bidirectional Thyristors |
| MAC4DSNT4G | Triacs Silicon Bidirectional Thyristors |
| MAC4M | TRIACS, Silicon Bidirectional Thyristors |
| MAC4N | TRIACS, Silicon Bidirectional Thyristors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC4DSN-1G | 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DSNT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Triacs Silicon Bidirectional Thyristors |
| MAC4DSNT4G | 功能描述:雙向可控硅 THY 4A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC-4FP-12 | 制造商:Mencom 功能描述: |
| MAC-4FP-12-R | 制造商:Mencom 功能描述:Cable Assembly 3.66m 22AWG 4 POS IP67 Circular F |
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