參數(shù)資料
型號(hào): MAC4DHMT4G
廠商: ON SEMICONDUCTOR
元件分類(lèi): 晶閘管
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: LEAD FREE, PLASTIC, CASE 369C, DPAK-3
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 86K
代理商: MAC4DHMT4G
MAC4DHM
http://onsemi.com
5
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Minimum Exponential Static dv/dt
versus GateMT1 Resistance
65
110
40
T
J
, JUNCTION TEMPERATURE (
°
C)
2.0
T
J
, JUNCTION TEMPERATURE (
°
C)
20
110
40
4.0
2.0
0
1000
10 K
100
GATEMT1 RESISTANCE (OHMS)
40
30
20
15
5
IH
I
L
S
1.0
0
25
5.0
20
50
95
25
5.0
8.0
10
12
,
4.0
3.0
5.0
80
50
65
MT2 POSITIVE
MT2 NEGATIVE
Q2
Q3
Q1
V
D
= 400 V
T
J
= 110
°
C
MAC4DHM
6.0
10
35
80
10
35
95
Q4
Figure 10. Typical Critical Rate of Rise of
Commutating Voltage
1.0
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
10
1.0
0.1
C
2.0
3.0
V
PK
= 400 V
100
°
C
90
°
C
T
J
= 110
°
C
t
w
V
DRM
(di/dt)
c
=6f I
TM
1000
f =
1
2 t
w
d
4.0
5.0
6.0
10
25
35
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
L
L
1N4007
200 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
NON-POLAR
C
L
51
MT2
MT1
1N914
G
T
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
R
S
ADJUST FOR
di/dt
(c)
C
S
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