參數(shù)資料
型號(hào): MAC4DHMT4G
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: LEAD FREE, PLASTIC, CASE 369C, DPAK-3
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 86K
代理商: MAC4DHMT4G
MAC4DHM
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
T
L
3.5
88
80
Maximum Lead Temperature for Soldering Purposes (Note 3)
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak OnState Voltage (Note 4) (I
TM
=
±
6.0 A)
V
TM
1.3
1.6
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
I
GT
1.8
2.1
2.4
4.2
5.0
5.0
5.0
10
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
V
GT
0.5
0.5
0.5
0.5
0.62
0.57
0.65
0.74
1.3
1.3
1.3
1.3
V
Gate NonTrigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 , T
J
= 110
°
C)
All Four Quadrants
V
GD
0.1
0.4
V
Holding Current (V
D
= 12 V, Gate Open, Initiating Current =
±
200 mA)
I
H
1.5
15
mA
Latching Current
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
(V
D
= 12 V, I
G
= 5.0 mA)
(V
D
= 12 V, I
G
= 5.0 mA)
(V
D
= 12 V, I
G
= 5.0 mA)
(V
D
= 12 V, I
G
= 10 mA)
I
L
1.75
5.2
2.1
2.2
10
10
10
10
mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 200 V, I
TM
= 1.8 A, Commutating dv/dt = 1.0 V/ sec,
T
J
= 110
°
C, f = 250 Hz, CL = 5.0 fd, LL = 80 mH, RS = 56 ,
CS = 0.03 fd) With snubber see Figure 11
di/dt(c)
3.0
A/ms
Critical Rate of Rise of OffState Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 110
°
C)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8
from case for 10 seconds.
4. Pulse Test: Pulse Width
2.0 msec, Duty Cycle
2%.
dv/dt
20
V/ s
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MAC4DHM001
DPAK3
369D
75 Units / Rail
MAC4DHM001G
DPAK3
(PbFree)
369D
75 Units / Rail
MAC4DHMT4
DPAK
369C
2500 / Tape & Reel
MAC4DHMT4G
DPAK
(PbFree)
369C
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
MAC4DLM-001G Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLMT4G Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLM Sensitive Gate Triacs Silicon Bidirectional Thyristors(三端雙向可控硅開(kāi)關(guān))
MAC4DSM Triacs Silicon Bidirectional Thyristors(三端雙向可控硅開(kāi)關(guān))
MAC4DSN Triacs Silicon Bidirectional Thyristors(三端雙向可控硅開(kāi)關(guān))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAC4DLM 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLM_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLM-001 功能描述:THYRISTOR TRIAC 4A 600V IPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 三端雙向可控硅開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 三端雙向可控硅開(kāi)關(guān)類型:邏輯 - 靈敏柵極 電壓 - 斷路:800V 電流 - 導(dǎo)通狀態(tài) (It (RMS))(最大):6A 電壓 - 柵極觸發(fā)器 (Vgt)(最大):1.5V 電流 - 非重復(fù)電涌,50、60Hz (Itsm):* 電流 - 柵極觸發(fā)電流 (Igt)(最大):10mA 電流 - 維持(Ih):25mA 配置:單一 安裝類型:* 封裝/外殼:* 供應(yīng)商設(shè)備封裝:* 包裝:* 其它名稱:568-9616-6
MAC4DLM-001G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC4DLM-1G 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB