參數(shù)資料
型號: MAC4DCNT4G
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Triacs Silicon Bidirectional Thyristors
中文描述: 800 V, 4 A, TRIAC
封裝: LEAD FREE, PLASTIC, CASE 369C, DPAK-3
文件頁數(shù): 6/8頁
文件大?。?/td> 91K
代理商: MAC4DCNT4G
MAC4DCM, MAC4DCN
http://onsemi.com
6
Figure 13. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2()
Figure 15. Critical Rate of Rise of
Commutating Voltage
125
100
T
J
, JUNCTION TEMPERATURE (
°
C)
4.0 K
T
J
, JUNCTION TEMPERATURE (
°
C)
125
100
10 K
2.0 K
0
5.0
35
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
100
10
1.0
C
2.0 K
0
105
110
115
120
105
110
12 K
14 K
10 K
8.0 K
115
120
S
S
4.0 K
6.0 K
8.0 K
10
15
GATE OPEN
V
PK
= 400 V
800 V
600 V
GATE OPEN
V
PK
= 400 V
800 V
600 V
V
PK
= 400 V
100
°
C
75
°
C
T
J
= 125
°
C
t
w
V
DRM
(di/dt)
c
=6f I
TM
1000
f =
1
2 t
w
d
6.0 K
20
25
30
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
L
L
1N4007
200 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
NON-POLAR
C
L
51
MT2
MT1
1N914
G
T
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
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