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| 型號(hào)： | MAC4DHM-001G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | LEAD FREE, PLASTIC, CASE 369D-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 86K |
| 代理商： | MAC4DHM-001G |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 5
1
Publication Order Number:
MAC4DHM/D
MAC4DHM
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
FourQuadrant Triggering
Blocking Voltage to 600 V
OnState Current Rating of 4.0 A RMS at 93
°
C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B
Machine Model, C
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
= 40 to 110
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
V
DRM,
V
RRM
600
V
OnState RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 93
°
C)
I
T(RMS)
4.0
A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
J
= 110
°
C)
I
TSM
40
A
Circuit Fusing Consideration (t = 8.3 msec)
I
2
t
6.6
A
2
sec
Peak Gate Power
(Pulse Width
≤
10 sec, T
C
= 93
°
C)
P
GM
0.5
W
Average Gate Power
(t = 8.3 msec, T
C
= 93
°
C)
P
G(AV)
0.1
W
Peak Gate Current
(Pulse Width
≤
10
sec, T
C
= 93
°
C)
I
GM
0.2
A
Peak Gate Voltage
(Pulse Width
≤
10
sec, T
C
= 93
°
C)
V
GM
5.0
V
Operating Junction Temperature Range
T
J
40 to 110
°
C
Storage Temperature Range
T
stg
40 to 150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
TRIACS
4.0 AMPERES RMS
600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
Main Terminal 1
1
2
3
Gate
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
Y
WW
AC4DHM = Device Code
G
= PbFree Package
= Year
= Work Week
1 2
3
4
YWW
AC
4DHMG
1
23
4
YWW
AC
4DHMG
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAC4DHM-1G | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DHMT4 | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DHMT4G | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| MAC4DLM | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC4DLM_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
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