參數(shù)資料
型號: MAC4DCN-1G
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Triacs Silicon Bidirectional Thyristors
中文描述: 800 V, 4 A, TRIAC
封裝: LEAD FREE, PLASTIC, CASE 369D-01, DPAK-3
文件頁數(shù): 1/8頁
文件大?。?/td> 91K
代理商: MAC4DCN-1G
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 6
1
Publication Order Number:
MAC4DCM/D
MAC4DCM, MAC4DCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
OnState Current Rating of 4.0 A RMS at 108
°
C
High Immunity to dv/dt 500 V/ s at 125
°
C
High Immunity to di/dt 6.0 A/ms at 125
°
C
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage
(Note 1) (T
J
= 40 to 125
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4DCM
MAC4DCN
V
DRM,
V
RRM
600
800
V
OnState RMS Current
(Full Cycle Sine Wave, 60 Hz,
T
C
= 108
°
C)
I
T(RMS)
4.0
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125
°
C)
I
TSM
40
A
Circuit Fusing Consideration
(t = 8.3 msec)
I
2
t
6.6
A
2
sec
Peak Gate Power
(Pulse Width
10 sec, T
C
= 108
°
C)
P
GM
0.5
W
Average Gate Power
(t = 8.3 msec, T
C
= 108
°
C)
P
G(AV)
0.1
W
Peak Gate Current
(Pulse Width
10
sec, T
C
= 108
°
C)
I
GM
0.5
A
Peak Gate Voltage
(Pulse Width
10
sec, T
C
= 108
°
C)
V
GM
5.0
V
Operating Junction Temperature Range
T
J
40 to 125
°
C
Storage Temperature Range
T
stg
40 to 150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
TRIACS
4.0 AMPERES RMS
600 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK3
CASE 369D
STYLE 6
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
Y
WW
AC4DCx
= Year
= Work Week
= Device Code
x= M or N
= PbFree Package
G
1 2
3
4
YWW
AC
4DCxG
1
23
4
YWW
AC
4DCxG
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