參數(shù)資料
型號: MAC212A8FP
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Isolated Triac Silicon Bidirectional Thyristor(12A,600V,三端雙向可控硅晶閘管)
中文描述: 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, TO-220FP, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 132K
代理商: MAC212A8FP
MAC212A6FP, MAC212A8FP, MAC212A10FP
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
TL
2.1
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = +125
°
C
IDRM,
IRRM
10
2.0
μ
A
mA
ON CHARACTERISTICS
Peak On-State Voltage
(ITM =
17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%)
VTM
1.3
1.75
Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
12
12
20
35
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
VGT
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
Volts
Gate Non–Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100
, TJ = +125
°
C)
All Four Quadrants
VGD
0.2
Volts
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
200 mA)
IH
6.0
50
mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
μ
s, Pulse Width = 2
μ
s)
tgt
1.5
μ
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85
°
C)
dv/dt(c)
5.0
V/
μ
s
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85
°
C)
dv/dt
100
V/
μ
s
相關(guān)PDF資料
PDF描述
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