參數(shù)資料
型號: MAC212A8FP
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Isolated Triac Silicon Bidirectional Thyristor(12A,600V,三端雙向可控硅晶閘管)
中文描述: 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝: PLASTIC, TO-220FP, 3 PIN
文件頁數(shù): 1/8頁
文件大小: 132K
代理商: MAC212A8FP
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1
Publication Order Number:
MAC212A6FP/D
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in Four Modes
Indicates UL Registered — File #E69369
Device Marking: Logo, Device Type, e.g., MAC212A6FP, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125
°
C, Sine Wave, 50
to 60 Hz, Gate Open)
MAC212A6FP
MAC212A8FP
MAC212A10FP
Symbol
Value
Unit
VDRM,
VRRM
400
600
800
Volts
On-State RMS Current (TC = +85
°
C)(2)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
12
Amps
Peak Non–repetitive Surge Current
(One Full Cycle, Sine Wave,
60 Hz, TC = +85
°
C)
Preceded and followed by rated current
ITSM
100
Amps
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power
(TC = +85
°
C, Pulse Width = 10
μ
s)
PGM
20
Watts
Average Gate Power
(TC = +85
°
C, t = 8.3 ms)
PG(AV)
0.35
Watt
Peak Gate Current
(TC = +85
°
C, Pulse Width = 10
μ
s)
IGM
2.0
Amps
RMS Isolation Voltage (TA = 25
°
C,
Relative Humidity
20%)
(
)
V(ISO)
1500
Volts
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
ISOLATED TRIAC
12 AMPERES RMS
400 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MAC212A6FP
ISOLATED TO220FP
500/Box
http://onsemi.com
MAC212A8FP
ISOLATED TO220FP
500/Box
MT1
G
MT2
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 3
1
2
3
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
(
)
MAC212A10FP
ISOLATED TO220FP
500/Box
Preferred
devices are recommended choices for future use
and best overall value.
相關PDF資料
PDF描述
MAC212A10 Triacs(三端雙向可控硅開關元件)
MAC223A10 Triac (Silicon Bidirectional Thyristor)(導通電流25A,重復截止峰值電壓800V的雙向可控硅)
MAC223A6 Triac (Silicon Bidirectional Thyristor)(導通電流25A,重復截止峰值電壓400V的雙向可控硅)
MAC223A8 Triac (Silicon Bidirectional Thyristor)(導通電流25A,重復截止峰值電壓600V的雙向可控硅)
MAC228A_06 Sensitive Gate Triacs Silicon Bidirectional Thyristors
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