參數(shù)資料
型號: MAC210A10
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Silicon Bidirectional Thyristor(10A,800V三端雙向可控硅晶閘管)
中文描述: 800 V, 10 A, TRIAC, TO-220AB
封裝: CASE 221A-07, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 77K
代理商: MAC210A10
MAC210A8, MAC210A10
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
2.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = +125
°
C
IDRM,
IRRM
10
2.0
μ
A
mA
ON CHARACTERISTICS
Peak On-State Voltage
(ITM =
14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
2%)
VTM
1.2
1.65
Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
12
12
20
35
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
VGT
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
Volts
Gate Non–Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100
,
TJ = +125
°
C) All Four Quadrants
VGD
0.2
Volts
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
200 mA, TC = +25
°
C)
IH
6.0
50
mA
Turn-On Time
(Rated VDRM, ITM = 14 A)
(IGT = 120 mA, Rise Time = 0.1
μ
s, Pulse Width = 2
μ
s)
DYNAMIC CHARACTERISTICS
tgt
1.5
μ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70
°
C)
dv/dt(c)
5.0
V/
μ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70
°
C)
dv/dt
100
V/
μ
s
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