參數(shù)資料
型號(hào)： MAC12SMG
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 晶閘管
英文描述： Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述： 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 68K
代理商： MAC12SMG
MAC12SM, MAC12SN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
17 A)
V
TM
1.85
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
1.5
2.5
2.7
5.0
5.0
5.0
mA
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±
200 mA)
I
H
2.5
10
mA
Latching Current (V
D
= 12 V, I
G
= 5 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
L
3.0
5.0
3.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 3.5 A, Commutating dV/dt = 10 V/ s, Gate Open, T
J
= 110
°
C,
f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 )
(di/dt)
c
8.0
10
A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= 67% V
DRM
, Exponential Waveform, R
GK
= 1 K , T
J
= 110
°
C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 sec; diG/dt = 1 A/ sec; Igt = 100 mA; f = 60 Hz
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dV/dt
15
40
V/ s
di/dt
10
A/ s
+ Current
+ Voltage
V
TM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
V
TM
I
H
Maximum On State Voltage
Holding Current
相關(guān)PDF資料
PDF描述
MAC12SNG Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC15-10 Silicon Bidirectional Thyristor(15A，800V三端雙向可控硅晶閘管)
MAC15A10 Silicon Bidirectional Thyristor(15A，800V三端雙向可控硅晶閘管)
MAC15A6 Silicon Bidirectional Thyristor(15A，400V三端雙向可控硅晶閘管)
MAC15A8 Silicon Bidirectional Thyristor(15A，600V三端雙向可控硅晶閘管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAC12SN 功能描述:雙向可控硅 THY 12A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC12SNG 功能描述:雙向可控硅 THY 12A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
MAC14 制造商:POWERBOX 制造商全稱(chēng):Powerbox 功能描述:5-6 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL
MAC14-003 制造商:POWERBOX 制造商全稱(chēng):Powerbox 功能描述:5-6 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL
MAC14-006 制造商:POWERBOX 制造商全稱(chēng):Powerbox 功能描述:5-6 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*