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參數(shù)資料
| 型號： | MAC12SNG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 800 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | MAC12SNG |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 3
1
Publication Order Number:
MAC12SM/D
MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Features
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70
°
C
High Surge Current Capability 90 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Maximum Values of I
GT
, V
GT
and I
H
Specified for Ease of Design
High Commutating di/dt 8.0 A/ms Minimum at 110
°
C
Immunity to dV/dt 15 V/ sec Minimum at 110
°
C
Operational in Three Quadrants: Q1, Q2, and Q3
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
= 40 to 110
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12SM
MAC12SN
V
DRM,
V
RRM
600
800
V
On-State RMS Current
(All Conduction Angles; T
C
= 70
°
C)
I
T(RMS)
12
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 110
°
C)
I
TSM
90
A
Circuit Fusing Consideration (t = 8.33 ms)
I
2
t
33
A
2
sec
Peak Gate Power
(Pulse Width = 1.0 sec, T
C
= 70
°
C)
P
GM
16
W
Average Gate Power
(t = 8.3 msec, T
C
= 70
°
C)
P
G(AV)
0.35
W
Operating Junction Temperature Range
T
J
T
stg
40 to 110
°
C
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. (V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
40 to 150
°
C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
TO220AB
CASE 221A09
STYLE 4
1
http://onsemi.com
MAC12SxG
AYWW
MARKING
DIAGRAM
x
A
Y
WW
G
= M, or N
= Assembly Location
= Year
= Work Week
= PbFree Package
23
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MAC12SN
TO220AB
50 Units / Rail
MAC12SNG
TO220AB
(PbFree)
50 Units / Rail
MAC12SM
TO220AB
50 Units / Rail
MAC12SMG
TO220AB
(PbFree)
50 Units / Rail
MT1
G
MT2
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
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