- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382273 > MA713 (PANASONIC CORP) Schottky Barrier Diodes (SBD) PDF資料下載
參數(shù)資料
| 型號： | MA713 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes (SBD) |
| 中文描述： | SILICON, L BAND, MIXER DIODE |
| 封裝： | ROHS COMPLIANT, MINI4-G1, SC-61, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 77K |
| 代理商： | MA713 |
Schottky Barrier Diodes (SBD)
MA4X713
(MA713)
Silicon epitaxial planar type
1
Publication date: August 2001
SKH00103AED
For switching
For wave detection
I
Features
Two isolated elements are contained in one package, allowing
high-density mounting
Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
Low forward voltage V
F
, optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
Mini type 4-pin package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
I
FM
30
V
Peak forward
Single
150
mA
current
Double
*
110
Forward current (DC)
Single
I
F
30
mA
Double
*
20
Junction temperature
T
j
125
°
C
°
C
Storage temperature
T
stg
55 to
+
125
Internal Connection
Marking Symbol: M1N
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F1
V
F2
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 k
, C
L
=
10 pF
1
μ
A
Forward voltage (DC)
0.4
V
1.0
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
1.5
pF
1.0
ns
Detection efficiency
η
65
%
I
Electrical Characteristics
T
a
=
25
°
C
4
1
3
2
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
=
0.35 ns
δ =
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
2.90
+0.02
0.16
+0.1
0
±
5
°
10
°
0.60
+0.10
1
+
–
1
+
–
1
+
–
2
+
–
1.9
±0.2
(
(0.2)
(0.95)
(0.95)
0
3
4
2
1
0.5R
Note)*: Value per chip
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 200 MHz
3.*: t
rr
measuring instrument
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MA4X724 | Silicon epitaxial planar type |
| MA724 | Schottky Barrier Diodes (SBD) |
| MA4X726 | Silicon epitaxial planar type |
| MA4X746 | Silicon epitaxial planar type |
| MA4X796 | Silicon epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA714 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA714-(TX) | 制造商:Panasonic Electric Works 功能描述:0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| MA714TX | 制造商:Panasonic Electric Works 功能描述:0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| MA715 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA7160 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。