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參數(shù)資料
| 型號： | MA4AGBLP912 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 94K |
| 代理商： | MA4AGBLP912 |
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
AlGaAs
RoHS Compliant
Beamlead PIN Diode
M/A-COMProducts
Rev. 2
MA4AGBLP912
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Electrical Specifications at T
AMB
= 25
°
C
Notes:
1. Capacitance is determined by measuring the isolation of a single series diode in a 50
line at 10GHz.
2. Forward series resistance is determined by measuring the insertion loss of a single series diode in a 50
line at
10GHz.
DIM
INCHES
MIN.
MM
MAX.
MIN.
MAX.
A
0.009
0.013
0.2286
0.3302
B
C
D
0.0049
0.0037
0.0049
0.0089
0.0057
0.0089
0.1245
0.0940
0.1245
0.2261
0.1448
0.2261
E
0.002
0.006
0.0508
0.1524
F
0.0218
0.0278
0.5537
0.70612
Test Conditions
Paramters
Units
Min
Typical
Max.
Total Capacitance @ –5V/10 GHz
1
Ct
fF
–
26
30
Forward Resistance @ +20mA/10 GHz
2
Rs
Ohms
–
4
4.9
Forward Voltage at +10mA
Vf
Volts
1.2
1.36
1.5
Leakage Current at –40 V
Ir
nA
–
50
300
Minority Carrier Lifetime
TL
nS
–
5
10
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