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參數(shù)資料
| 型號(hào)： | MA3X200F |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | Mini Type, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 47K |
| 代理商： | MA3X200F |
Switching Diodes
MA3X200F
Silicon epitaxial planar type
1
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
80
V
Peak reverse voltage
V
RM
I
F
80
V
Forward voltage
(DC)
Single
100
mA
Series
75
Peak forward
current
Single
I
FM
225
mA
Series
170
Non-repetitive peak
forward surge current
*
Single
I
FSM
500
mA
Series
325
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
For switching circuits
I
Features
Two elements contained in one package, allowing high-density
mounting
Soft recovery characteristic (T
rr
: 100 ns)
Small terminal capacitance, C
t
I
Absolute Maximum Ratings
T
a
= 25
°
C
Unit : mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R1
V
R
= 75 V
V
R
= 5 V, T
a
= 85
°
C
I
F
= 100 mA
I
R
= 100
μ
A
V
R
= 0 V, f
= 1 MHz
10
nA
I
R2
V
F
V
R
20
nA
Forward voltage (DC)
1.2
V
Reverse voltage (DC)
80
V
Terminal capacitance
C
t
2.5
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100
100
ns
I
Electrical Characteristics
T
a
= 25
°
C
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Internal Connection
Marking Symbol: M5M
Note) * : t = 1 s
1
3
2
2.8
+
0.2
0.3
+
0.25
1.5
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
0
0
1
+
0
0
0
0.4
±
0.2
0
0
+
0
0
1
0.1 to 0.3
2
+
0
0
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Mini Type Package (3-pin)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
0.1
·
I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
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