參數(shù)資料
型號： M6MGB162S2BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 29/29頁
文件大?。?/td> 235K
代理商： M6MGB162S2BVP
Sep.1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S2BVP
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
t
su (PD)
t
rec (PD)
ns
ms
(2) TIMING REQUIREMINTS
Symbol
Parameter
Test conditions
Limits
Typ
Min
0
5
Max
Units
Power down set up time
Power down recovery time
(3) TIMING DIAGRAM
S-CE control mode
V
V
m
A
2.0
S-Vcc
(PD)
V
I (S-CE)
Symbol
Parameter
Test conditions
Limits
Typ
Min
Max
Units
Power down supply voltage
Chip select input S-CE
0.2
24
Typical value is for Ta=25 C
Icc
(PD)
+25 ~ +40 C
-20 ~ +25 C
-W
8
3
0.3
1
1
-
-
-
-
-
-
m
A
m
A
m
A
Power down
supply current
S-Vcc=3.0V
S-CE>
other=
+40 ~ +70 C
+70 ~ +85 C
S-Vcc
0.2V
t
su (PD)
2.7V
2.7V
0.2V
t
rec (PD)
S-CE
29
S-CE 0.2V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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