參數(shù)資料
型號(hào)： M6MGB162S2BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù)： 24/29頁(yè)
文件大?。?/td> 235K
代理商： M6MGB162S2BVP
Sep.1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S2BVP
When setting S-CE at a low level,the chips are in a
non-selectable mode in which both reading and writing are
disabled. In this mode, the output stage is in ahigh-impedance
state, allowing OR-tie with other chips and memory expansion
by S-CE.
The power supply current is reduced as low as 0.3
m
A(25
C,typical), and the memory data can be held at +2V
powersupply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.
The SRAM of M6MGB/T162S2BVP is organized as
262,144-word by 8-bit. These devices operate on a single
+2.7~3.6V powersupply, and are directly TTL compatible to
both input and output. Its fully static circuit needs no clocks
and no refresh, and makes it useful.
The operation mode are determined by a combination of
the device control inputs , S-CE , WE# and OE#. Each mode
is summarized in the function table.
A write operation is executed whenever the low level WE#
overlaps with the high level S-CE. The address
(S-A
-1
~A16:byte mode) must be set up before the write cycle
and must be stable during the entire cycle.
A read operation is executed by setting WE# at a high level
and OE# at a low level while S-CE are in an active
state(S-CE=H).
2. SRAM
24
FUNCTION TABLE
Mode
WE#
X
L
H
H
High-Z
Din
Dout
High-Z
OE#
X
X
L
H
DQ0~7
Non selection
Icc
Standby
Active
Active
Active
Read
Write
S-CE
L
H
H
H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
M6MGB331S8AKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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