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參數(shù)資料
| 型號(hào)： | M68701H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile |
| 中文描述： | 硅場效應(yīng)晶體管功放，890 - 960MHz 6W調(diào)頻/數(shù)字移動(dòng) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 133K |
| 代理商： | M68701H |
(1/3)
MITSUBISHI RF POWER MODULE
M68701H
Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile
H 1 1
O U T L IN E D R A W IN G
P I N :
P
in
V
G G
: G A T E B IA S S U P P L Y
V
D D
: D R A IN B I A S S U P P L Y
P
O
: R F O U T P U T
G N D : FIN
: R F I N P U T
D im e n s i o n s i n m m
1
2
3
4
5
B L O C K D IAG R A M
4
5
3
2
1
8.3 +/-1
43.3 +/-1
21.3 +/-1
50.2+/-1
51.3 +/-1
60.5 +/-1
57.5 +/-0.5
1
2
3
4
5
p h a i 0 . 4 5
+/-0.2
2-R1.6
+0.2
0
1
1
6
3
2
(
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDD
SUPPLY VOLTAGE
VGG
GATE BIAS VOLTAGE
Pin
INPUT POWER
Po
OUTPUT POWER
Tc(OP)
OPERATION CASE TEMPERATURE f=890-960MHz,Z
G
=Z
L
=50 ohms
Tstg
STORAGE TEMPERATURE
Note:Above parameters are guaranteed independently.
CONDITIONS
RATINGS
17
5.5
10
10
-30 to +100
-40 to +110
UNIT
V
V
mW
W
deg. C
deg. C
V
GG
<5V,Z
G
=Z
L
=50 ohms
f=890-960MHz,Z
G
=Z
L
=50 ohms
f=890-960MHz,Z
G
=Z
L
=50 ohms
ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50
ohms
UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN
890
6
35
UNIT
MAX
960
f
FREQUENCY RANGE
OUTPUT POWER
TOTAL EFFICIENCY
2nd HARMONIC
INPUT VSWR
LOAD VSWR
TOLERANCE
MHz
W
%
dBc
-
-
Po
V
DD
=12.5V,V
GG
=5V,Pin=1mW
V
DD
=12.5V,
Pout=6W (V
GG
adjust)
Pin=1mW
V
DD
=15.2V,Pin=1mW,Po=6W(V
GG
adjust)
Z
G
=50 ohms, LOAD VSWR=20:1
Efficiency
2fo
VSWR in
-
-30
4
No degradation
or destroy
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-
flammable material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELETROSTATIC
SENSITIVE
DEVICES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M68701M | Silicon MOS FET Power Amplifier, 860-915MHz 6W FM /Digital Mobile |
| M68701 | SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO |
| M68706H | 300-308MHz, 12.5V, 20W, FM MOBILE RADIO |
| M68706 | 250-270MHz, 12.5V, 30W, FM MOBILE RADIO |
| M68707L | 215-230MHz, 9.6V, 7W, FM PORTABLE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M68701M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Silicon MOS FET Power Amplifier, 860-915MHz 6W FM /Digital Mobile |
| M68702H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:150-175MHz, 12.5V, 60W, FM MOBILE RADIO |
| M68702L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:135-160MHz, 12.5V, 60W, FM MOBILE RADIO |
| M68703 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:440-470mhZ, 12.5v, 50w, fm mobile radio |
| M68703HA | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:440-470mhZ, 12.5v, 50w, fm mobile radio |
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