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參數(shù)資料
| 型號： | M68701 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO |
| 中文描述： | 硅場效應(yīng)晶體管功率放大器，820 - 851MHz，6W，便攜式收音機(jī)調(diào)頻 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 28K |
| 代理商： | M68701 |
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
M68701
MITSUBISHI RF POWER MODULE
Nov. ′97
8.3±1
43.3±1
21.3±1
50.4±1
51.3±1
OUTLINE DRAWING
PIN:
1
2
3
4
5
P
in
V
GG
: GATE BIAS SUPPLY
V
DD
: DRAIN BIAS SUPPLY
P
O
: RF OUTPUT
GND: FIN
: RF INPUT
Dimensions in mm
Symbol
Parameter
Test conditions
Limits
Min
820
Max
851
Unit
f
P
O
η
T
2f
O
ρ
in
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Load VSWR tolerance
V
DD
=12.5V,
V
GG
=5V,
P
in
=1mW
V
DD
=15.2V, P
in
=1mW,
P
O
=6W (V
GG
adjust), Z
L
=20:1
6
35
-30
No degradation or
destroy
MHz
W
%
dBc
-
-
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C,Z
G
=Z
L
=50
unless otherwise noted)
Symbol
V
DD
V
GG
P
in
P
O
T
C (OP)
T
stg
Parameter
Conditions
Ratings
17
5.5
10
10
-30 to +100
-40 to +100
Unit
V
V
mW
W
°
C
°
C
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°
C unless otherwise noted)
Note. Above parameters are guaranteed independently.
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Storage temperature
V
GG
≤
3.5V, Z
G
=Z
L
=50
f=820-851MHz, Z
G
=Z
L
=50
f=820-851MHz, Z
G
=Z
L
=50
f=820-851MHz, Z
G
=Z
L
=50
Stability
4
60.5±1
57.5±0.5
1
2
3
4
5
0.45±0.2
Z
G
=Z
L
=50
, V
DD
=10-16V,
Load VSWR
<
4:1
-
No parasitic oscillation
2-R1.6+0.2
0
BLOCK DIAGRAM
4
5
3
2
1
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