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參數(shù)資料
| 型號： | M5M4V16169DRT-7 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| 中文描述： | 16MCDRAM：16米（100萬字由16位）與16K的緩存內(nèi)存（1024字由16位）的SRAM |
| 文件頁數(shù)： | 41/64頁 |
| 文件大小： | 737K |
| 代理商： | M5M4V16169DRT-7 |
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M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
DRAM Auto Refresh
2
3
4
5
6
7
8
9
10
11
12
13
14
1
RAS#
CAS#
DTD#
Ad0-11
CMd#
CMs#
CC0#
DQC(u/l)
WE#
CC1#
G#
As0-9
DQ0-15
SRAM operation can be freely performed.
CS#
Note: DRAM must be in Precharge state prior to Auto-Refresh cycle.
DRAM new commands except for NOP,DNOP and DPD can be set
after tRC later from ARF command input.
DPD DPD ARF
DNOP
DPD DPD DPD DPD DPD DPD ARF
DNOP
tRC
DNOP DNOP
H
H
H
H
41
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V16169DRT-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
| M5M4V16169DTP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM |
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