參數(shù)資料
型號: M58BW016DBT
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號,引導(dǎo)塊,突發(fā)3V電源閃存
文件頁數(shù): 41/63頁
文件大?。?/td> 895K
代理商: M58BW016DBT
41/63
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Figure 16. Synchronous Burst Read - Continuous - Valid Data Ready Output
Note: Valid Data Ready = Valid Low during valid clock edge
1. V= Valid output.
2. R is an open drain output with an internal pull up resistor of 1M
.
The internal timing of R follows DQ. An external resistor, typically
300k
.
for a single memory on the R bus, should be used to give the data valid set up time required to recognize that valid data is
available on the next valid clock edge.
Figure 17. Synchronous Burst Read - Burst Address Advance
AI03649
K
Output
(1)
V
V
V
V
tRLKH
R
V
(2)
AI03650
K
ADD
Q0
Q1
L
Q2
ADD
VALID
G
tGLQV
tBLKH
tBHKH
B
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW016DBZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
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M58BW016DT100T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DT100T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DT100ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories