參數(shù)資料
型號(hào): M58BW016DBT
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號(hào),引導(dǎo)塊,突發(fā)3V電源閃存
文件頁(yè)數(shù): 30/63頁(yè)
文件大小: 895K
代理商: M58BW016DBT
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
30/63
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 12, Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 12. Absolute Maximum Ratings
Note: Cumulative time at a high voltage level of 13.5V should not exceed 80 hours on V
PP
pin.
Symbol
Parameter
Value
Unit
Min
Max
T
BIAS
Temperature Under Bias
–40
125
°C
T
STG
Storage Temperature
–55
155
°C
V
IO
Input or Output Voltage
–0.6
V
DDQ
+0.6
V
DDQIN
+0.6
V
V
DD
, V
DDQ,
V
DDQIN
Supply Voltage
–0.6
4.2
V
V
PP
Program Voltage
–0.6
13.5
(1)
V
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