參數(shù)資料
型號： M50FLW080AN5G
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 1M X 8 FLASH 3V PROM, 11 ns, PDSO40
封裝： 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40
文件頁數(shù)： 18/64頁
文件大?。?/td> 534K
代理商： M50FLW080AN5G
M50FLW080A, M50FLW080B
Command interface
4
Command interface
All Bus Write operations to the device are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. An internal
Program/Erase Controller handles all timings, and verifies the correct execution of the
Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor the progress or the result of the operation.
The Command Interface reverts to the Read mode when power is first applied, or when
exiting from Reset. Command sequences must be followed exactly. Any invalid combination
of commands will be ignored. See Table 11 for the available Command Codes.
The following commands are the basic commands used to read from, write to, and configure
the device. The following text descriptions should be read in conjunction with Table 13.
4.1
Read Memory Array command
The Read Memory Array command returns the device to its Read mode, where it behaves
like a ROM or EPROM. One Bus Write cycle is required to issue the Read Memory Array
command and return the device to Read mode. Once the command is issued, the device
remains in Read mode until another command is issued. From Read mode, Bus Read
operations access the memory array.
If the Program/Erase Controller is executing a Program or Erase operation, the device will
not accept any Read Memory Array commands until the operation has completed.
For a multibyte read, in the FWH mode, the address, that was transmitted with the
command, will be automatically aligned, according to the MSIZE granularity. For example, if
MSIZE=7, regardless of any values that are provided for A6-A0, the first output will be from
the location for which A6-A0 are all ‘0’s.
Table 11.
Command codes
Hexa-decimal
Command
10h
Alternative Program Setup, Double/Quadruple Byte Program Setup, Chip
Erase Confirm
20h
Block Erase Setup
32h
Sector Erase Setup
40h
Program, Double/Quadruple Byte Program Setup
50h
Clear Status Register
70h
Read Status Register
80h
Chip Erase Setup
90h
Read Electronic Signature
B0h
Program/Erase Suspend
D0h
Program/Erase Resume, Block Erase Confirm, Sector Erase Confirm
FFh
Read Memory Array
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50FLW080AN5P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AN5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080AN5TG 功能描述:IC FLASH 8MBIT 33MHZ 40TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
M50FLW080AN5TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
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