參數(shù)資料
型號(hào)： M470L6423CK0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
中文描述： 512MB的DDR SDRAM內(nèi)存模組（64Mx64基于鉑64Mx 8 DDR內(nèi)存）200pin的SODIMM 64 Non-ECC/Parity
文件頁(yè)數(shù)： 5/14頁(yè)
文件大?。?/td> 121K
代理商： M470L6423CK0
200pin DDR SDRAM SODIMM
M470L6423CK0
Rev. 0.0 Aug. 2001
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to Vss
V
DDQ
T
STG
-0.5 ~ 3.6
V
Storage temperature
-55 ~ +150
°
C
Power dissipation
P
D
16
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
POWER & DC OPERATING CONDITIONS (SSTL_2 In/Out)
Note :
Notes
1. Includes
±
25mV margin for DC offset on V
REF
, and a combined total of
±
50mV margin for all AC noise and DC offset on V
REF
,
bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on V
REF
and internal DRAM noise coupled
TO V
REF
, both of which may result in V
REF
noise. V
REF
should be de-coupled with an inductance of
≤
3nH.
2.V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
REF
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.
5. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the dc level of the same.
6. These charactericteristics obey the SSTL-2 class II standards.
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
I/O Supply voltage
V
DDQ
2.3
2.7
V
I/O Reference voltage
V
REF
VDDQ/2-50mV
VDDQ/2+50mV
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
4
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
4
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.3
V
DDQ
+0.6
V
3
Input crossing point voltage, CK and CK inputs
V
IX
(DC)
1.15
1.35
V
5
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
+ 0.84V
I
OH
-16.8
mA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
- 0.84V
I
OL
16.8
mA
Output High Current(Half strengh driver)
;V
OUT
=
V
TT
+ 0.45V
I
OH
-9
mA
Output High Current(Half strengh driver)
;V
OUT
= V
TT
- 0.45V
I
OL
9
mA
相關(guān)PDF資料
PDF描述
M470L6423EN 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-A2 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-B0 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CB3 512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CLB3 512MB Unbuffered SODIMM(based on sTSOP)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470L6423EN 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-A2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-B0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CB3 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
M470L6423EN0-CLB3 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP)
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