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參數(shù)資料
| 型號： | M470L6423CK0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity |
| 中文描述： | 512MB的DDR SDRAM內(nèi)存模組（64Mx64基于鉑64Mx 8 DDR內(nèi)存）200pin的SODIMM 64 Non-ECC/Parity |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 121K |
| 代理商： | M470L6423CK0 |
200pin DDR SDRAM SODIMM
M470L6423CK0
Rev. 0.0 Aug. 2001
6. Input Setup/Hold Slew Rate Derating
This derating table is used to increase t
IS
/t
IH
in the case where the input slew rate is below 0.5V/ns. Input setup/hold slew rate
based on the lesser of AC-AC slew rate and DC-DC slew rate.
7. I/O Setup/Hold Slew Rate Derating
This derating table is used to increase t
DS
/t
DH
in the case where the I/O slew rate is below 0.5V/ns. I/O setup/hold slew rate
based on the lesser of AC-AC slew rate and DC-DC slew rate.
8. I/O Setup/Hold Plateau Derating
This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF
±
310mV for a duration of
up to 2ns.
9. I/O Delta Rise/Fall Rate(1/slew-rate) Derating
This derating table is used to increase t
DS
/t
DH
in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate
is calated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 5V/ns and slew rate 2 =.4V/ns then the Delta Rise/Fall
Rate =-0/5ns/V. Input S/H slew rate based on larger of AC-AC delta rise/fall rate and DC-DC delta rise/fall rate.
10. This parameter is fir system simulation purpose. It is guranteed by design.
Input Setup/Hold Slew Rate
tIS
(ps)
tIH
(ps)
(V/ns)
0.5
0
0
0.4
+50
+50
0.3
+100
+100
I/O Setup/Hold Slew Rate
tDS
(ps)
tDH
(ps)
(V/ns)
0.5
0
0
0.4
+75
+75
0.3
+150
+150
I/O Input Level
tDS
(ps)
tDH
(ps)
(mV)
±
280
+50
+50
Delta Rise/Fall Rate
tDS
(ps)
tDH
(ps)
(ns/V)
0
0
0
±
0.25
±
0.5
+50
+50
+100
+100
相關PDF資料 |
PDF描述 |
|---|---|
| M470L6423EN | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M470L6423EN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
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