參數(shù)資料
型號(hào)： M470L3324BT0-CA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
中文描述： DDR SDRAM的緩沖模塊18 4針緩沖模塊基于512Mb乙芯片
文件頁(yè)數(shù)： 4/20頁(yè)
文件大?。?/td> 284K
代理商： M470L3324BT0-CA2
DDR SDRAM
256MB, 512MB, 1GB Unbuffered SODIMM
Rev. 0.1 June 2005
Preliminary
CC(DDR400@CL=3)
-
166MHz
200MHz
3-3-3
B3(DDR333@CL=2.5)
133MHz
166MHz
-
2.5-3-3
A2(DDR266@CL=2)
133MHz
133MHz
-
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
-
2.5-3-3
Speed @CL2
Speed @CL2.5
Speed @CL3
CL-tRCD-tRP
200Pin Unbuffered SODIMM based on 512Mb D-die (x8, x16)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
SSTL_2 Interface
66pin TSOP II & 54pin sTSOP II
Pb-Free
package
RoHS compliant
1.0 Ordering Information
2.0 Operating Frequencies
Part Number
Density
256MB
512MB
1GB
Organization
32M x 64
64M x 64
128M x 64
Component Composition
32Mx16 (K4H511638D) * 4EA
32Mx16 (K4H511638D) * 8EA
64Mx8 (K4H510838D) * 16EA
Height
1,250mil
1,250mil
1,250mil
M470L3324DU0-C(L)CC/B3/A2/B0
M470L6524DU0-C(L)CC/B3/A2/B0
M470L2923DV0-C(L)CC/B3/A2/B0
3.0 Feature
相關(guān)PDF資料
PDF描述
M470L3324BT0-CB0 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CB3 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CCC DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CLA2 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CLB0 DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470L3324BT0-CB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CB3 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CCC 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CLA2 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
M470L3324BT0-CLB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
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