參數(shù)資料
型號(hào)： M470L3224FU0-CA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Ring Core Bead Ferrite; Impedance:340ohm; Cable Diameter Max:0.203"; Width (Latch Included):1.23"; External Height:1.155"; External Width:1.125"; Length:1.25"
中文描述： 的DDR SDRAM SODIMM
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 264K
代理商： M470L3224FU0-CA2
DDR SDRAM
128MB, 256MB SODIMM Pb-Free
Revision 1.2 Oct. 2004
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16)
Ordering Information
Operating Frequencies
Part Number
Density
128MB
256MB
128MB
Organization
16M x 64
32M x 64
16M x 72
Component Composition
16Mx16 (K4H561638F) * 4EA
16Mx16 (K4H561638F) * 8EA
16Mx16 (K4H561638F) * 5EA
Height
1,250mil
1,250mil
1,250mil
M470L1624FU0-C(L)B3/A2/B0
M470L3224FU0-C(L)B3/A2/B0
M485L1624FU0-C(L)B3/A2/B0
B3(DDR333@CL=2.5)
133MHz
166MHz
2.5-3-3
A2(DDR266@CL=2)
133MHz
133MHz
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
2.5-3-3
Speed @CL2
Speed @CL2.5
CL-tRCD-tRP
Feature
Power supply : Vdd: 2.5V
±
0.2V, Vddq: 2.5V
±
0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2, 2.5 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1250 (mil), single(128MB), double(256MB) sided component
SSTL_2 Interface
Pb-Free
RoHS compliant
相關(guān)PDF資料
PDF描述
M485L1624FU0-CA2 Ring Core Bead Ferrite; Impedance:200ohm; Cable Diameter Max:0.35"; Latch Height:0.2"; Width (Latch Included):0.885"; External Height:0.79"; External Width:0.77"; Length:1.45"
M470L1624FU0-CB0 Split Core Ferrite Bead; Inner Diameter:0.45"; Package/Case:Split Ferrite Core; External Width:0.93"; Frequency:100MHz; Impedance:238ohm; Latch Height:0.38"; Mounting Type:Surface Mount; Width (Latch Included):1.035" RoHS Compliant: Yes
M470L3224FU0-CB0 DDR SDRAM SODIMM
M470L1624FU0-CB3 DDR SDRAM SODIMM
M470L3224FU0-CB3 DDR SDRAM SODIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470L3224FU0-CB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM SODIMM
M470L3224FU0-CB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM SODIMM
M470L3224HU0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
M470L3224JU0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
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