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參數(shù)資料
| 型號： | M470L3223DT0-CLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256MB DDR SDRAM MODULE |
| 中文描述： | 256MB的DDR內(nèi)存模塊 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 171K |
| 代理商： | M470L3223DT0-CLB3 |
M470L3223DT0
Rev. 0.0 Dec. 2001
6. Input Setup/Hold Slew Rate Derating
This derating table is used to increase t
IS
/t
IH
in the case where the input slew rate is below 0.5V/ns. Input setup/hold slew rate
based on the lesser of AC-AC slew rate and DC-DC slew rate.
7. I/O Setup/Hold Slew Rate Derating
This derating table is used to increase t
DS
/t
DH
in the case where the I/O slew rate is below 0.5V/ns. I/O setup/hold slew rate
based on the lesser of AC-AC slew rate and DC-DC slew rate.
8. I/O Setup/Hold Plateau Derating
This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF
±
310mV for a duration of
up to 2ns.
9. I/O Delta Rise/Fall Rate(1/slew-rate) Derating
This derating table is used to increase t
DS
/t
DH
in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate
is calated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 5V/ns and slew rate 2 =.4V/ns then the Delta Rise/Fall
Rate =-0/5ns/V. Input S/H slew rate based on larger of AC-AC delta rise/fall rate and DC-DC delta rise/fall rate.
10. This parameter is fir system simulation purpose. It is guranteed by design.
11. For each of the terms, if not already an integer, round to the next highest integer. tCK is actual to the system clock cycle time.
Input Setup/Hold Slew Rate
tIS
(ps)
tIH
(ps)
(V/ns)
0.5
0
0
0.4
+50
+50
0.3
+100
+100
I/O Setup/Hold Slew Rate
tDS
(ps)
tDH
(ps)
(V/ns)
0.5
0
0
0.4
+75
+75
0.3
+150
+150
I/O Input Level
tDS
(ps)
tDH
(ps)
(mV)
±
280
+50
+50
Delta Rise/Fall Rate
tDS
(ps)
tDH
(ps)
(ns/V)
0
0
0
±
0.25
±
0.5
+50
+50
+100
+100
The following table specifies derating values for the specifications listed if the single-ended clock skew rate is less than 1.0V/ns.
tIH/tIS
(ps)
(ps)
CK slew rate
(Single ended)
tDSS/tDSH
tAC/tDQSCK
(ps)
tLZ(min)
(ps)
tHZ(max)
(ps)
1.0V/ns
0
0
0
0
0
0.75V/ns
+50
+50
+50
-50
+50
0.5V/ns
+100
+100
+100
-100
+100
<Note>
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470L3223DT0 | 256MB DDR SDRAM MODULE |
| M470L3223DT0-CA0 | 256MB DDR SDRAM MODULE |
| M470L3223DT0-CA2 | 256MB DDR SDRAM MODULE |
| M470L3223DT0-CB0 | 256MB DDR SDRAM MODULE |
| M470L3223DT0-CB3 | 256MB DDR SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470L3224BT0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224BTO | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
| M470L3224DT0-CA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256MB DDR SDRAM MODULE |
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