- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382269 > M470L2923BNV0-CB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die PDF資料下載
參數(shù)資料
| 型號： | M470L2923BNV0-CB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| 中文描述： | DDR SDRAM的緩沖模塊18 4針緩沖模塊基于512Mb乙芯片 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 284K |
| 代理商： | M470L2923BNV0-CB0 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered SODIMM
Rev. 1.5 June 2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
66 TSOP-II & 54 sTSOP-II
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 512Mb B-die
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M470L2923BNV0-CB3 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BNV0-CCC | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BN0-CA2 | RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK |
| M470L2923BNV0-CLA2 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BNV0-CLB0 | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470L2923BNV0-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BNV0-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BNV0-CLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BNV0-CLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L2923BNV0-CLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。