| 型號 | 廠商 | 描述 |
| m470l3224dt0-ca2 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l3224dt0-cb0 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l3224dt0-cb3 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l3224dt0-la0 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l3224dt0-la2 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l3224dt0-lb0 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l3224dt0-lb3 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256MB DDR SDRAM MODULE |
| m470l6524bt0-ca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-ca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-cb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-cb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-ccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bn0-ca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK |
| m470l2923bnv0-cla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-clb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-clb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l2923bnv0-clcc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-ca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-cb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-cb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-ccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-cla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-clb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-clb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524btu0-clcc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-cb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-cb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-ccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-cla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-clb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-clb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m470l6524bt0-clcc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| m48z12-70pc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-70pc6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-70pc6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-150pc1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| m48z12-150pc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-150pc6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| m48z12-150pc6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-200pc1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| m48z12-200pc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-200pc6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| m48z12-200pc6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 5V, 16 Kbit (2Kb x 8) ZEROPOWER SRAM |
| m48z12-70pc1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
意法半導(dǎo)體 | 16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| m490b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | SINGLE CHIP VOLTAGE SYNTHESIS TUNING SYSTEMS WITH 1 ANALOG CONTROL |
| m50fw040k1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| m50fw040n1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| m50fw040 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| m50fw040k 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| m50fw040k1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |