
HARDWARE
3850 Group (Spec. H) User’s Manual
FUNCTIONAL DESCRIPTION
1-68
Limits
Parameter
200
100
25
100
25
0
100
50
10
Symbol
Unit
Write cycle time
Address set up time
Address hold time
Data set up time
Data hold time
______
WE set up time
______
WE hold time
_____
CE pulse width
_____
“H” CE pulse width
Program time
Erase all blocks time
_____
RY/BY delay time
_____
RP recovery time
tWC
tAS
tAH
tDS
tDH
tWS
tWH
tCEP
tCEPH
tDAP
tDAE
tEHRL
tPS
Min.
Typ.
Max.
25
1.5
200
ns
s
ns
s
_____
Table 24 Read / Write mode (CE control)
Parameter
Erase all blocks time
Block erase time
Program time (1byte)
1.5
1.0
25
s
Min.
Typ.
Max.
Unit
Table 25 Erase and program operation
Symbol
Min.
Typ.
Max.
Unit
Table 26 VCC power up / power down timing
Parameter
_____
RP = VIH set up time
(after rised VCC = VCC min.)
tVCS
10
Note : The read timing parameter in the command write operation mode is same as that of the read-only mode.
Typical value is at VCC = 5.0 V, Ta = 25 °C condition.
Note : Miserase or miswrite may happen, in case of noise pulse due to the power supply on or off is input to the control pins. Therefore disableing the
write mode is need for prevent from memory data break at the power supply on or off. 10
s (min.) waiting time is need to initiate read or write op-
_____
eration after VCC rises to VCC min. at power supply on. The memory data is protected owing to keep the RP pin VIL level at power supply off. The
_____
RP pin must be kept VIL level for 10
s (min.) after VCC rises to VCC min. at the power supply on. The RP pin must be kept VIL level until the VCC
_____
falls to the GND level at power supply off. RP pin doesn't have latch mode, so RP pin must be kept VIH level during read, erase and program op-
eration.
Flash memory mode Electrical characteristics
(Ta = 25oC, VCC = 4.5 to 5.5V unless otherwise noted)
s