參數(shù)資料
型號: M383L2828ET1
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Registered Module
中文描述: DDR SDRAM的注冊模塊
文件頁數(shù): 11/23頁
文件大?。?/td> 448K
代理商: M383L2828ET1
DDR SDRAM
256MB, 512MB, 1GB Registered DIMM
Revision 1.4 February, 2004
DDR SDRAM IDD spec table
M383(12)L6420ETS [ (64M x 4) * 18 , 512MB Module ]
(V
DD
=2.7V, T = 10
°
C)
AA
(DDR266@CL=2)
(DDR266@CL=2)
IDD0
2,370
2,070
IDD1
2,730
2,430
IDD2P
380
380
IDD2F
990
990
IDD2Q
650
650
IDD3P
870
870
IDD3N
1,440
1,440
IDD4R
2,790
2,790
IDD4W
3,060
3,060
IDD5
3,510
3,510
IDD6
Normal
379
379
Low power
352
352
IDD7A
5,430
4,950
M383(12)L2828ET1(0) [ (st.128M x 4) * 18 , 1GB Module ]
(V
DD
=2.7V, T = 10
°
C)
AA
(DDR266@CL=2)
(DDR266@CL=2)
IDD0
3,490
3,000
IDD1
3,850
3,360
IDD2P
558
558
IDD2F
1,470
1,470
IDD2Q
1,100
1,100
IDD3P
1,530
1,530
IDD3N
2,370
2,370
IDD4R
3,720
3,720
IDD4W
3,990
3,990
IDD5
4,440
4,440
IDD6
Normal
558
558
Low power
504
504
IDD7A
6,550
5,880
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
A2
B0
(DDR266@CL=2.5)
2,070
2,430
380
990
650
870
1,440
2,790
3,060
3,510
379
352
4,950
A0
(DDR200@CL=2)
1,850
2,120
360
830
590
750
1,220
2,300
2,480
3,110
360
330
4,280
Unit
Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
A2
B0
(DDR266@CL=2.5)
3,000
3,360
558
1,470
1,100
1,530
2,370
3,720
3,990
4,440
558
504
5,880
A0
(DDR200@CL=2)
2,700
2,970
540
1,280
1,010
1,330
2,070
3,150
3,330
3,960
540
480
5,130
Unit
Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
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