參數(shù)資料
型號(hào): M368L2923DUN-CCC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
中文描述: DDR SDRAM的緩沖模塊184pin緩沖模塊的發(fā)展為本的512Mb芯片與64/72-bit非ECC /有鉛ECC的66 TSOP-II免費(fèi)(符合RoHS)
文件頁(yè)數(shù): 9/25頁(yè)
文件大?。?/td> 463K
代理商: M368L2923DUN-CCC
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 0.1 June 2005
The following specification parameters are required in systems using DDR333 devices to ensure proper system performance. these
characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR400
DDR333
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
V/ns
a, m
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
ps
k
0.4 V/ns
+75
ps
k
0.3 V/ns
+150
ps
k
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
ps
j
+/- 0.25 V/ns
+50
ps
j
+/- 0.5 V/ns
+100
ps
j
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
AC CHARACTERISTICS
DDR400
DDR333
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
e,m
13.0 System Characteristics for DDR SDRAM
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