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參數(shù)資料
| 型號： | M368L2923DUN-CCC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | DDR SDRAM的緩沖模塊184pin緩沖模塊的發(fā)展為本的512Mb芯片與64/72-bit非ECC /有鉛ECC的66 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 463K |
| 代理商： | M368L2923DUN-CCC |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 0.1 June 2005
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B0(DDR333@CL=2.5)
Unit
Notes
IDD0
1,080
950
mA
IDD1
1,350
1,220
mA
IDD2P
45
mA
IDD2F
270
mA
IDD2Q
230
mA
IDD3P
410
270
mA
IDD3N
540
410
mA
IDD4R
1,400
1,260
mA
IDD4W
1,580
1,350
mA
IDD5
1,980
1,850
mA
IDD6
Normal
45
mA
Low power
27
mA
Optional
IDD7A
3,470
3,240
mA
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B0(DDR333@CL=2.5)
Unit
Notes
IDD0
1,440
1,200
mA
IDD1
1,680
1,440
mA
IDD2P
80
mA
IDD2F
480
mA
IDD2Q
400
mA
IDD3P
720
480
mA
IDD3N
960
720
mA
IDD4R
1,720
1,480
mA
IDD4W
1,880
1,560
mA
IDD5
2,240
2,000
mA
IDD6
Normal
80
mA
Low power
48
mA
Optional
IDD7A
3,560
3,240
mA
9.4 M368L2923DUN [ (64M x 8) * 16, 1GB Non ECC Module ]
9.3 M381L6523DUM [ (64M x 8) * 9, 512MB ECC Module ]
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|---|---|
| M368L2923DUN-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
| M368L2923DUN-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
| M368L2923FLN-CB300 | 制造商:Samsung SDI 功能描述:AT |
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