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參數(shù)資料
| 型號(hào)： | M368L2923BUN-CB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL |
| 中文描述： | DDR SDRAM的緩沖模塊184pin緩沖模塊基于512Mb乙芯片與64/72-bit非ECC / ECC的66 TSOP-II |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 463K |
| 代理商： | M368L2923BUN-CB3 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 0.1 June 2005
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC (DDR400@CL=3)
B3 (DDR333@CL=2.5)
Unit
Notes
IDD0
1,620
1,350
mA
IDD1
1,890
1,620
mA
IDD2P
90
mA
IDD2F
540
mA
IDD2Q
450
mA
IDD3P
810
540
mA
IDD3N
1,080
810
mA
IDD4R
1,940
1,670
mA
IDD4W
2,120
1,760
mA
IDD5
2,520
2,250
mA
IDD6
Normal
90
mA
Low power
54
mA
Optional
IDD7A
4,010
3,650
mA
9.5 M381L2923DUM [ (64M x 8) * 18, 1GB ECC Module ]
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| M368L2923BUN-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L2923CUN-CLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L2923DUN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| M368L2923DUN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
| M368L2923DUN-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
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